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 TLP2601
TOSHIBA Photocoupler GaAAs Ired & Photo-IC
TLP2601
Isolated Line Receiver Simplex / Multiplex Data Transmission Computer-Peripheral Interface Microprocessor System Interface Digital Isolation For A/D, D/A Conversion Direct Replacement For HCPL-2601
The TOSHIBA TLP2601 a photocoupler which combines a GaAAs IRed as the emitter and an integrated high gain, high speed photodetector. The output of the detector circuit is an open collector, Schottky clamped transistor. A Faraday shield integrated on the photodetector chip reduces the effects of capacitive coupling between the input LED emitter and the high gain stages of the detector. This provides an effective common mode transient immunity of 1000V/s. * * * * * * Input current thresholds: IF = 5mA max. Isolation voltage: 2500Vrms min. Switching speed: 10MBd Common mode transient immunity: 1000V/s min. Guaranteed performance over temp.: 0C~70C UL Recognized: UL1577, file No. E67349
1 8 7 6 5 SHIELD
Unit in mm
TOSHIBA Weight: 0.54g
11-10C4
Pin Configuration (top view)
Truth Table
(positive logic)
Input H L H L Enable H H L L Output L H H H 2 VF 3 + IF
2 3 4
Schematic
ICC IO 8 6 SHIELD VCC VO
A 0.01 to 0.1F bypass capacitor must be connected between pins 8 and 5 (see Note 1).
IE VE
5 7
GND
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TLP2601
Recommended Operating Conditions
Characteristic Input current, low level Input current, high level Supply voltage, output High level enable voltage Low level enable voltage Fan out (TTL load) Operating temperature Symbol IFL IFH VCC VEH VEL N Topr Min. 0 6.3 (*) 4.5 2.0 0 3/4 0 Typ. 3/4 3/4 3/4 3/4 3/4 3/4 3/4 Max. 250 20 5.5 VCC 0.8 8 70 Unit A mA V V V 3/4 C
(*) 6.3mA is a guard banded value which allows for at least 20% CTR degradation. Initial input current threshold value is 5.0mA or less.
Maximum Ratings (no derating required)
Characteristic Forward current Reverse voltage Output current Output voltage Detector Supply voltage (1 minute maximum) Enable input voltage (not to exceed VCC by more than 500mV) Output collector power dissipation Operating temperature range Storage temperature range Lead solder temperature (10s) Isolation voltage (R.H. 60%,AC 1min., (Note 10) (**) Symbol IF VR IO VO VCC Rating 20 5 25 -0.5~7 7 Unit mA V mA V V
LED
VE Po Topr Tstg Tsol BVS
5.5 40 -40~85 -55~125 260 2500 3540
V mW C C C Vrms Vdc
(**) 1.6mm below seating plane.
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TLP2601
Electrical Characteristics (Ta = 0C ~70C unless otherwise noted)
Characteristic High level output current Symbol IOH Test Condition VCC = 5.5V, VO = 5.5V IF = 250mA, VE = 2.0V VCC = 5.5V, IF = 5mA VE = 2.0V, IOL(sinking) = 13mA VCC = 5.5V, IF = 0, VE = 0.5V VCC = 5.5V, IF = 10mA VE = 0.5V VCC = 5.5V, VE = 0.5V VCC = 5.5V, VE = 2.0V (Note 11) 3/4 IF = 10mA, Ta = 25 IR = 10mA, Ta = 25 VF = 0, f = 1MHz IF = 10mA Relative humidity = 45% Ta=25, t = 5 second VI-O = 3000Vdc, (Note 10) VI-O = 500V, R.H. 60% (Note 10) f = 1MHz, (Note 10) Min. 3/4 Typ. 1 Max. 250 Unit mA
Low level output voltage High level supply current
VOL ICCH
3/4 3/4
0.4 7
0.6 15
V mA
Low level supply current
ICCL
3/4
12
19
mA
Low level enable current High level enable current High level enable voltage Low level enable voltage Input forward voltage Input reverse breakdown voltage Input capacitance Input diode temperature coefficient Input-output insulation leakage current Resistance (input-output) Capacitance (input-output)
IEL IEH VEH VEL VF BVR CIN VF/TA
3/4 3/4 2.0 3/4 3/4 5 3/4 3/4
-1.6 -1 3/4 3/4 1.65 3/4 45 -2.0
-2.0 3/4 3/4
mA mA
V 0.8 1.75 3/4 3/4 3/4 V V pF mV / C
II-O
3/4
3/4
1
mA
RI-O CI-O
5x1010 3/4
1014 0.6
3/4 3/4
W pF
(**)All typ.values are at VCC = 5V, Ta = 25C.
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TLP2601
Switching Characteristics (Ta = 25, VCC = 5 V)
Characteristic Propagation delay time to high output level Propagation delay time to low output level Output rise time(10-90%) Output fall time(90-10%) Propagation delay time of enable from VEH to VEL Propagation delay time of enable from VEL to VEH Symbol tpLH 1 Test Circuit Test Condition Min. Typ. 60 Max. 75 Unit ns
RL = 350, CL = 15pF IF = 7.5mA (Note 2), (Note 3), (Note 4)&(Note 5)
tpHL tr tf tELH

60 30 30 25
75
ns ns ns ns
RL = 350, CL = 15pF IF = 7.5mA 2 VEH = 3.0V VEL = 0.5V (Note 6)&(Note 7) VCM = 400V
tEHL
25
ns
Common mode transient immunity at high output level 3 Common mode transient immunity at low output level CML CMH
RL = 350 VO(min.) = 2V IF = 0mA, VCM = 400V RL = 350 VO(max.) = 0.8V IF = 7.5mA, (Note 8) (Note 9)
1000
10000
V/s
-1000 -10000
V/s
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TLP2601
Test Circuit 1.
5V tpHL and tpLH IF = 7.5mA IF = 3.75mA tpHL tpLH Output VO 1.5V VOH VOL Pulse generator ZO = 50W tr = 5ns IF Monitoring node 1 2 3 4 GND VCC 8 0.1mF Bypass
(*) CL
Input IF
7 6 5
RL VO Output monitoring node
(*) CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 2.
tELH and tEHL Pulse generator ZO = 50 W tr = 5ns 3.0V Input VE tEHL tELH Output VO 1.5V VOH VOL 1.5V 7.5mA dc IF Input VE monitoring node 5V 1 2 3 4 GND VCC 8 0.1mF Bypass
(*) CL
47W
7 6 5
RL VO Output monitoring node
(*) CL is approximately 15pF which includes probe and stray wiring capacitance.
Test Circuit 3.
Transient Immunity and Typ. Waveforms. 1 90% VCM VO Switch at A : IF = 0mA VO Switch at B : IF = 5mA VOL 10% tr 10% 90% tf 400V 0V B 5V VFF A IF 2 3 4 Pulse gen. ZO = 50 W GND VCM VCC 8 7 6 5 0.1mF Bypass RL VO 5V
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2002-09-25
TLP2601
IF - VF
100 Ta = 25C -2.6
DVF / DTa - IF
10
Forward voltage temperature coefficient DVF /DTa (mV/C)
-2.4
(mA)
-2.2 -2.0
forward current
IF
1
-1.8
0.1
-1.6
0.01 1.0
-1.4 0.1 1.2 1.4 1.6 1.8
0.3
1
3
10
30
Forward current
IF
(mA)
Forward voltage
VF
(V)
VO - IF
8
IOH - Ta
VCC = 5V Ta = 25C 100 IF = 250mA 50 VCC = 5.5V VO = 5.5V
(V)
6
Output voltage VO
4
RL=350W 1kW 4kW
High level output current IOH (mA)
3 4 5 6
30
10 5 3
2
0 0
1
2
Forward current
IF
(mA)
1 0 10 20 30 40 50 60 70
Ambient temperature Ta (C)
VO - IF
8 VCC = 5V 0.5
VOL - Ta
IF = 5mA RL=350W RL=4kW VCC = 5.5V VE = 2V IOL=16mA 12.8mA 9.6mA 6.4mA
(V)
4
Ta = 70C 0C
Low level output voltage VOL (V)
6
6
Output voltage VO
0.4
2
0.3
0 0
1
2
3
4
5
Forward current
IF
(mA)
0.2
0
20
40
60
80
Ambient temperature Ta (C)
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2002-09-25
TLP2601
tpHL, tpLH - IF
120 tpLH 100 RL=4kW 100 120
tpHL, tpLH - Ta
RL= 4kW tpLH 350W 1kW 80 tpLH 350W 60 tpHL 40 1kW 4kW
Propagation delay time tpHL, tpLH (ns)
80 tpHL
tpLH tpLH
1kW 350W 350W 1kW 4kW Ta = 25C VCC = 5V
60
40
20
Propagation delay time tpHL, tpLH (ns)
20
VCC = 5 V IF = 7.5mA
0
5
7
9
11
13
15
17
19
Forward current
IF
(mA)
0 0
10
20
30
40
50
60
70
Ambient temperature Ta (C)
tr, tf - Ta
320 VCC = 5V IF = 7.5mA tf 280 RL= 4kW 80 VCC = 5V VEH = 3V IF = 7.5mA
tEHL, tELH - Ta
300
70
tELH
RL= 4kW
(ns)
tr, tf
60
Enable propagation delay time tEHL, tELH (ns)
80
tf
1kW
Rise, fall time
50
60 tf 350W
40 tELH 30 tELH 20 tEHL 10 1kW 350W 350W 1kW 4kW
40
20
tr
350W 1kW 4kW
0 0
10
20
30
40
50
60
70
Ambient temperature Ta (C)
0
0
10
20
30
40
50
60
70
Ambient temperature Ta (C)
7
2002-09-25
TLP2601
Notes
1. The VCC supply voltage to each TLP2601 isolator must be bypassed by a 0.1F capacitor of larger.This can be either a ceramic or solid tantalum capacitor with good high frequency characteristic and should be connected as close aspossible to the package VCC and GND pins of each device. tpHL Propagation delay is measured from the 3.75mA level on the low to high transition of the input current pulse to the 1.5V level on the high to low transition of the output voltage pulse. Propagation delay is measured from the 3.75mA level on the high to low transition of the input current pulse to the 1.5V level on the low to high transition of the output voltage pulse. Fall time is measured from the 10% to the 90% levels of the high to low transition on the output pulse. Rise time is measured from the 90% to 10% levels of the low to high transition on the output pulse. Enable input propagation delay is measured from the 1.5V level on the low to high transition of the input voltage pulse to the 1.5V level on the high to low transition of the output voltage pulse. Enable input propagation delay is measured from the 1.5V level on the high to low transition of the input voltage pulse to the 1.5V level on the low to high transition of the output voltage pulse. The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the low output state (i.e., VOUT < 0.8V). Measured in volts per microsecond (V / s). The maximum tolerable rate of fall of the common mode voltage to ensure the output will remain in the high state (i.e., VOUT > 2.0V). Measured in volts per microsecond(V / s). Volts/microsecond can be translated to sinusoidal voltages: V / s =
(dv CM ) = fCM VCM (p.p.) dt Max.
2.
3.
tpLH
4.
tf
5.
tr
6.
tEHL
7.
tELH
8.
CML
9.
CMH
Example: VCM = 318Vpp when fCM = 1MHz using CML and CMH = 1000V / s data sheet specified minimum. 10. Device considered a two-terminal device: Pins 1, 2, 3 and 4 shorted together, and Pins 5, 6, 7 and 8 shorted together. No pull up resistor required as the device has an internal pull up resistor.
11. Enable input
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TLP2601
RESTRICTIONS ON PRODUCT USE
000707EBC
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * Gallium arsenide (GaAs) is a substance used in the products described in this document. GaAs dust and fumes are toxic. Do not break, cut or pulverize the product, or use chemicals to dissolve them. When disposing of the products, follow the appropriate regulations. Do not dispose of the products with other industrial waste or with domestic garbage. * The products described in this document are subject to the foreign exchange and foreign trade laws. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice.
9
2002-09-25


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